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簡(jiǎn)要描述：晶體尺寸：10毫米電學(xué)性能：金屬，電荷密度波（CDW）（TCDW ~ 170K）晶體結(jié)構(gòu)：?jiǎn)涡本?/br>晶胞參數(shù)：a = 1.479nm，B = 0.364nm，C = 0.934nm，α=γ= 90°，β= 110.71晶體類型：合成晶體純度：＞99.995%表征方法：XRD、拉曼、EDX
更新時(shí)間：2024-06-03產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家訪 問 量：1081相關(guān)文章
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晶體尺寸：10毫米
電學(xué)性能：金屬，電荷密度波（CDW）（TCDW ~ 170K）
晶體結(jié)構(gòu)：?jiǎn)涡本?/span>
晶胞參數(shù)：a = 1.479nm，B = 0.364nm，C = 0.934nm，α=γ= 90°，β= 110.71
晶體類型：合成
晶體純度：＞99.995%
表征方法：XRD、拉曼、EDX
X-ray diffraction on a TaTe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker.
Powder X-ray diffraction (XRD) of a single crystal TaTe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal TaTe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal TaTe2. Measurement was performed with a 785 nm Raman system at room temperature.
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