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二硒化鈮晶體 2H-NbSe2(Niobium Selenide)
晶體尺寸：~10毫米
電學性能：金屬，半導體（TC ~ 7.2k）
Charge Density Waves (CDW) system, Tcdw ~33K
晶體結構：六邊形
晶胞參數(shù)：a = b = 0.344 nm, c = 1.255 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a 2H phase NbSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8
Stoichiometric analysis of a single crystal 2H NbSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal 2H NbSe2. Measurement was performed with a 785 nm Raman system at room temperature.
聯(lián)系人：陳谷一
地址：江蘇省泰州市鳳凰西路168號
郵箱：taizhou@sunano.com.cn
電話：021-56830191
