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Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns.

制備方法：層間催化裂解法 厚度：1~5nm 直徑：~5um 比表面積：90-130 m2/g 外觀：黑色粉末

制備方法： 層間催化裂解法 厚度：~2nm 直徑：5~10um 純度：98% 含氧量：1.44% 電導(dǎo)率：~2597 s/cm

Carboxyl (-COOH) functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique.

Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm.